sot-23 plastic-encapsulate diodes 1SS226 switching diode features z low forward voltage z fast reverse recovery time z small total capacitance marking: c3 maximum ratings ,single diode @t a =25 parameter symbol limit unit non-repetitive peak r everse v oltage v rm 85 v peak repetitive peak r everse v oltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 80 v forward continuous current i fm 300 ma average rectified output current i o 100 ma peak f orward s urge c urrent @t =10ms i fsm 2 a power dissipation p d 150 mw junction t emperature t j 150 storage t emperature t stg -55~+150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 100ua 80 v reverse voltage leakage current i r v r =80v 0.5 ua forward voltage v f i f =100ma 1.2 v diode capacitance c d v r =0v , f=1mhz 3 pf reverse recovery time t r r i f =10ma 4 ns sot-23 1 2 3 tiger electronic co.,ltd a,jun,2011
0 25 50 75 100 125 150 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 020406080 1 10 100 1000 0 5 10 15 20 0.8 1.0 1.2 forward characteristics reverse characteristics power derating curve power dissipation p d (mw) ambient temperature ta ( ) 1SS226 typical characteristics t a = 1 0 0 t a = 2 5 forward current i f (ma) forward voltage v f (v) ta=100 ta=25 reverse current i r (na) reverse voltage v r (v) ta=25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf) a,jun,2011
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